Lattice relaxation and dislocation generation/annihilation in SiGe-on-insulator layers during Ge condensation process

Measurements of alloy composition and strain in thin Ge<i>x</i>Si1−<i>x</i> layers

J. C. Tsang, P. M. Mooney, F. H. Dacol et al. · Journal of Applied Physics · 1994 · 427 citations

Natural Sciences, Materials Science, Physics +15

Strain relaxation kinetics in Si1−<i>x</i>Ge<i>x</i>/Si heterostructures

D. C. Houghton · Journal of Applied Physics · 1991 · 386 citations

Natural Sciences, Materials Science, Physics +17

Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction

Tetsuo Tezuka, Naoharu Sugiyama, Shinichi Takagi · Applied Physics Letters · 2001 · 290 citations

Engineering, Materials Engineering, Materials Science +17

New approach to grow pseudomorphic structures over the critical thickness

Yu‐Hwa Lo · Applied Physics Letters · 1991 · 233 citations

Natural Sciences, Materials Engineering, Materials Science +17

Simulation of dislocations on the mesoscopic scale. II. Application to strained-layer relaxation

K. W. Schwarz · Journal of Applied Physics · 1999 · 60 citations

Natural Sciences, Materials Engineering, Materials Science +17