A new IGBT behavioral model

Use of Hammerstein models in identification of nonlinear systems

Eşref Eşkinat, Stanley H. Johnson, William L. Luyben · AIChE Journal · 1991 · 463 citations

Engineering, Chemical Engineering, Dynamical Systems +16

An experimentally verified IGBT model implemented in the Saber circuit simulator

Allen R. Hefner, D.M. Diebolt · IEEE Transactions on Power Electronics · 1994 · 305 citations

Engineering, Electrical Engineering, Physics +17

An analytical model for the steady-state and transient characteristics of the power insulated-gate bipolar transistor

Allen R. Hefner, David L. Blackburn · Solid-State Electronics · 1988 · 257 citations

Engineering, Electrical Engineering, Circuit Theory +15

The insulated gate transistor: A new three-terminal MOS-controlled bipolar power device

B. Jayant Baliga, M.S. Adler, R.P. Love et al. · IEEE Transactions on Electron Devices · 1984 · 238 citations

Engineering, Electrical Engineering, Microelectronics +13

A behavioral model of the IGBT for circuit simulation

Jia Tzer Hsu, Khai D. T. Ngo · 2002 · 32 citations

Engineering, Electrical Engineering, Microelectronics +15