Si doping in Ge2Sb2Te5 film to reduce the writing current of phase change memory - Concepedia

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Si doping in Ge2Sb2Te5 film to reduce the writing current of phase change memory

63

Citations

10

References

2007

Year

Jie Feng, Yan Zhang, Boshi Qiao, Yunfeng Lai, Yandan Lin, B.C. Cai, T. A. Tang, Bohao Chen

Applied Physics A

Materials EngineeringMaterials ScienceElectrical EngineeringEngineeringElectronic MemoryApplied PhysicsSemiconductor MaterialSemiconductor MemoryGe2sb2te5 FilmPhase Change MemorySilicon On Insulator

References

	Year	Citations

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