Si doping in Ge2Sb2Te5 film to reduce the writing current of phase change memory

Threshold switching in chalcogenide-glass thin films

David Adler, M. S. Shur, M. Silver et al. · Journal of Applied Physics · 1980 · 493 citations

Natural Sciences, Materials Engineering, Materials Science +17

Amorphous-to-crystal transition of nitrogen- and oxygen-doped Ge2Sb2Te5 films studied by <i>in situ</i> resistance measurements

S. Privitera, E. Rimini, R. Zonca · Applied Physics Letters · 2004 · 211 citations

Natural Sciences, Materials Science, Physics +17

Laser-induced crystallization phenomena in GeTe-based alloys. II. Composition dependence of nucleation and growth

J. H. Coombs, A. P. J. M. Jongenelis, W. van Es-Spiekman et al. · Journal of Applied Physics · 1995 · 125 citations

Natural Sciences, Materials Engineering, Materials Science +17

Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

Baowei Qiao, Jie Feng, Yunfeng Lai et al. · Applied Surface Science · 2005 · 78 citations

Engineering, Materials Engineering, Materials Science +16

Nitrogen-doped Ge2Sb2Te5 films for nonvolatile memory

Yunfeng Lai, Baowei Qiao, Jie Feng et al. · Journal of Electronic Materials · 2005 · 77 citations

Engineering, Materials Engineering, Materials Science +14