T. A. Tang

Reproducible unipolar resistance switching in stoichiometric ZrO2 films

Xiaojing Wu, Peng Zhou, Jing Li et al. · Applied Physics Letters · 2007 · 177 citations

Natural Sciences, Materials Engineering, Materials Science +17

<i>In Situ</i> Observation of Compliance-Current Overshoot and Its Effect on Resistive Switching

H. J. Wan, Peng Zhou, L. Ye et al. · IEEE Electron Device Letters · 2010 · 88 citations

Engineering, Electrical Engineering, Materials Science +10

Si doping in Ge2Sb2Te5 film to reduce the writing current of phase change memory

Jie Feng, Yan Zhang, Boshi Qiao et al. · Applied Physics A · 2007 · 64 citations

Engineering, Materials Engineering, Materials Science +14

Resistive Memory Switching of $\hbox{Cu}_{x}\hbox{O}$ Films for a Nonvolatile Memory Application

Hangbing Lv, M. Yin, Xiaoniu Fu et al. · IEEE Electron Device Letters · 2008 · 64 citations

Engineering, Materials Engineering, Materials Science +16

Improvement of Resistive Switching in $\hbox{Cu}_{x} \hbox{O}$ Using New RESET Mode

M. Yin, Peng Zhou, Hangbing Lv et al. · IEEE Electron Device Letters · 2008 · 41 citations

Engineering, Materials Engineering, Materials Science +14