H. J. Wan

<i>In Situ</i> Observation of Compliance-Current Overshoot and Its Effect on Resistive Switching

H. J. Wan, Peng Zhou, L. Ye et al. · IEEE Electron Device Letters · 2010 · 88 citations

Electrical Engineering, Compliance-current Overshoot, Engineering +10

Role of TaON interface for CuxO resistive switching memory based on a combined model

Peng Zhou, Ming Yin, H. J. Wan et al. · Applied Physics Letters · 2009 · 62 citations

Materials Science, Non-volatile Memory, Electrical Engineering +15

Retention-failure mechanism of TaN∕CuxO∕Cu resistive memory with good data retention capability

H. J. Wan, Peng Zhou, L. Ye et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2009 · 12 citations

Non-volatile Memory, Engineering, Tan∕cuxo∕cu Resistive Memory +18

Investigation of ALD or PVD (Ti-rich vs. N-rich) TiN metal gate thermal stability on HfO&lt;inf&gt;2&lt;/inf&gt; high-K

Lei Wu, H.Y. Yu, X. Li et al. · 2010 · 10 citations