L. Ye is an author at Fudan University specializing in microelectronics, memory reliability, and memory devices.
Top concepts
MemoryEngineeringHeat TransferMemory DevicesApplied PhysicsMicroelectronicsMemory ReliabilityComputer EngineeringTransient ElectronicsElectrical Engineering
Publications per year
2009–2009
1
1
Retention-failure mechanism of TaN∕CuxO∕Cu resistive memory with good data retention capability
H. J. Wan, Peng Zhou, L. Ye et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2009 · 12 citations
Non-volatile Memory, Engineering, Tan∕cuxo∕cu Resistive Memory +18
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