M. Yin

Resistive Memory Switching of $\hbox{Cu}_{x}\hbox{O}$ Films for a Nonvolatile Memory Application

Hangbing Lv, M. Yin, Xiaoniu Fu et al. · IEEE Electron Device Letters · 2008 · 64 citations

Engineering, Materials Engineering, Materials Science +16

Forming Process Investigation of $\hbox{Cu}_{x} \hbox{O}$ Memory Films

Hangbing Lv, M. Yin, Yanfang Song et al. · IEEE Electron Device Letters · 2008 · 62 citations

Natural Sciences, Materials Engineering, Materials Science +17

Improvement of Resistive Switching in $\hbox{Cu}_{x} \hbox{O}$ Using New RESET Mode

M. Yin, Peng Zhou, Hangbing Lv et al. · IEEE Electron Device Letters · 2008 · 41 citations

Engineering, Materials Engineering, Materials Science +14

Performance improvement of CuOx with gradual oxygen concentration for nonvolatile memory application

Peng Zhou, Hangbing Lv, M. Yin et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2008 · 37 citations

Natural Sciences, Materials Engineering, Materials Science +14

Improvement of Endurance and Switching Stability of Forming-Free CuxO RRAM

Hualiang Lv, M. Yin, Peng Zhou et al. · 2008 · 20 citations

Natural Sciences, Materials Engineering, Materials Science +13