Improvement of Endurance and Switching Stability of Forming-Free CuxO RRAM

Abstract

Cu-oxide grown by plasma oxidation is found typically composed of upper CuO layer and inner graded Cu <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> O. The initial forming process leads to endurance degradation but can be improved by annealing in an oxygen deficient ambient. By using ramped pulse and verification algorithm, the endurance and programming voltage shift are further ameliorated.