Endurance Optimization
Endurance Optimization is a methodological framework in solid-state storage systems that enhances the lifespan of flash memory by minimizing wear through controlled write operations and data management strategies.
218
Publications
8.6K
Citations
912
Authors
214
Institutions
Publications per year
2017–2026
74
Parents
218
Sangyeun Cho, Hyunjin Lee · 2009 · 532 citations
Rethinking Database Algorithms for Phase Change Memory
Shimin Chen, Phillip B. Gibbons, Suman Nath · 2011 · 226 citations
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214

Hong Kong Polytechnic University
Hong Kong, Hong Kong
14 h-index
41 publications
1.4K citations

Chinese Academy of Sciences
Beijing, China
13 h-index
82 publications
2.3K citations

National Taiwan University
Taipei, Taiwan
11 h-index
39 publications
900 citations

City University of Hong Kong
Hong Kong, Hong Kong
11 h-index
19 publications
444 citations

Chongqing University
Chongqing, China
11 h-index
27 publications
792 citations
Institute of Microelectronics
Beijing, China
9 h-index
82 publications
4K citations

Huazhong University of Science and Technology
Wuhan, China
9 h-index
33 publications
2.5K citations
Seoul National University
Seoul, South Korea
8 h-index
26 publications
1.5K citations
1–8 of 214
9 publications · 208 citations
9
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9 publications · 467 citations
9
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7 publications · 171 citations
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TECS · 5 publications · 229 citations
5
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5 publications · 202 citations
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