Concepedia

Endurance Characteristics

Endurance Characteristics is a performance metric that quantifies the ability of a memristive material to retain its resistive switching functionality over repeated read/write cycles without degradation.

835

Publications

39.3K

Citations

4.1K

Authors

750

Institutions

Publications per year

2017–2026

356

Parents

Publications

835

High switching endurance in TaOx memristive devices

J. Joshua Yang, M.-X. Zhang, John Paul Strachan et al. · Applied Physics Letters · 2010 · 634 citations · Full text

, , +13

Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM

Hsuan‐Yu Lee, P. S. Chen, Tong Wu et al. · 2008 · 623 citations

, , +14

Understanding memristive switching via in situ characterization and device modeling

Wen Sun, Bin Gao, Miaofang Chi et al. · Nature Communications · 2019 · 461 citations · Full text

, , +17

CMOS Compatible Nanoscale Nonvolatile Resistance Switching Memory

Sung Hyun Jo, Wei Lü · Nano Letters · 2008 · 408 citations

, , +17

Spin-Transfer Torque Magnetic Memory as a Stochastic Memristive Synapse for Neuromorphic Systems

Adrien F. Vincent, J. Larroque, Nicolas Locatelli et al. · IEEE Transactions on Biomedical Circuits and Systems · 2015 · 353 citations · Full text

, , +16

1–5 of 835

Authors

4.1K

  1. MJ
    M. Jurczak

    IMEC, Belgium

    18 publications · 1.1K citations

    14

    h-index

  2. TC
    Ting‐Chang Chang

    National Sun Yat-sen University, Taiwan

    16 publications · 772 citations

    14

    h-index

  3. RD
    R. Degraeve

    IMEC, Belgium

    17 publications · 1.1K citations

    14

    h-index

  4. TT
    Tseung‐Yuen Tseng

    National Yang Ming Chiao Tung University, Taiwan

    14 publications · 768 citations

    14

    h-index

  5. AF
    A. Fantini

    IMEC, Belgium

    15 publications · 848 citations

    12

    h-index

1–5 of 4.1K

Institutions

750

  1. National Yang Ming Chiao Tung University

    Hsinchu, Taiwan

    28 h-index

    158 publications

    6.6K citations

  2. Seoul National University

    Seoul, South Korea

    22 h-index

    139 publications

    8.4K citations

  3. Institute of Microelectronics

    Beijing, China

    21 h-index

    195 publications

    17.1K citations

  4. IMEC

    Leuven, Belgium

    20 h-index

    286 publications

    14.4K citations

  5. Commissariat à l'Énergie Atomique et aux Énergies Alternatives

    Paris, France

    19 h-index

    199 publications

    9.3K citations

  6. Samsung (South Korea)

    Seoul, South Korea

    18 h-index

    156 publications

    10.8K citations

  7. Chinese Academy of Sciences

    Beijing, China

    18 h-index

    199 publications

    13.6K citations

  8. Stanford University

    Stanford, United States

    16 h-index

    77 publications

    5.2K citations

1–8 of 750

Venues

  1. Applied Physics Letters

    66 publications · 4K citations

    34

    h-index

  2. IEEE Electron Device Letters

    61 publications · 2.5K citations

    33

    h-index

  3. IEEE Transactions on Electron Devices

    50 publications · 2.7K citations

    26

    h-index

  4. ACS Applied Materials & Interfaces

    23 publications · 1.3K citations

    19

    h-index

  5. Scientific Reports

    17 publications · 1.2K citations

    17

    h-index

1–5