Concepedia

Baowei Qiao

BQ

8

Publications

294

Citations

8

H-Index

2005

Active since

Affiliations

Fudan University(Current)

Shanghai Jiao Tong University

Silicon Labs (United States)

Shanghai Fudan Microelectronics (China)

Microchip Technology (Germany)

Baowei Qiao is an author at Fudan University specializing in applied physics, engineering, and materials science.

Top concepts

EngineeringApplied PhysicsMaterial ScienceElectrical EngineeringThin FilmsMicroelectronicsSemiconductorsNanoelectronicsElectronic DevicesComputer Engineering

Publications per year

2005–2007

8

Publications

8

Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

Baowei Qiao, Jie Feng, Yunfeng Lai et al. · Applied Surface Science · 2005 · 78 citations

Materials Science, Electrical Engineering, Engineering +9

Nitrogen-doped Ge2Sb2Te5 films for nonvolatile memory

Yunfeng Lai, Baowei Qiao, Jie Feng et al. · Journal of Electronic Materials · 2005 · 76 citations

Materials Science, Non-volatile Memory, Nitrogen-doped Ge2sb2te5 Films +5

Effects of Si Doping on Phase Transition of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Films by in situ Resistance Measurements

Yun Ling, Yinyin Lin, Baowei Qiao et al. · Japanese Journal of Applied Physics · 2006 · 42 citations

Engineering, Semiconductors, Nanoelectronics +17

Si–Sb–Te films for phase-change random access memory

Baowei Qiao, Jie Feng, Yunfeng Lai et al. · Semiconductor Science and Technology · 2006 · 30 citations

Semiconductors, Materials Science, Electrical Engineering +14

Design of Multi-States Storage Medium for Phase Change Memory

Jie Feng, Yunfeng Lai, Baowei Qiao et al. · Japanese Journal of Applied Physics · 2007 · 23 citations

Engineering, Emerging Memory Technology, Computer Architecture +19

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