Yinyin Lin

Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

Baowei Qiao, Jie Feng, Yunfeng Lai et al. · Applied Surface Science · 2005 · 78 citations

Engineering, Materials Engineering, Materials Science +16

Nitrogen-doped Ge2Sb2Te5 films for nonvolatile memory

Yunfeng Lai, Baowei Qiao, Jie Feng et al. · Journal of Electronic Materials · 2005 · 77 citations

Engineering, Materials Engineering, Materials Science +14

Effects of Si Doping on Phase Transition of Ge₂Sb₂Te₅ Films by in situ Resistance Measurements

Yun Ling, Yinyin Lin, Baowei Qiao et al. · Japanese Journal of Applied Physics · 2006 · 42 citations

Natural Sciences, Materials Engineering, Materials Science +17

A 0.13 µm 8 Mb Logic-Based Cu$_{\rm x}$Si$_{\rm y}$O ReRAM With Self-Adaptive Operation for Yield Enhancement and Power Reduction

Xiaoyong Xue, Wenxiang Jian, Jianguo Yang et al. · IEEE Journal of Solid-State Circuits · 2013 · 41 citations · Full text

Engineering, Computer Engineering, Electrical Engineering +16

Characteristics of Si-doped Sb2Te3 thin films for phase-change random access memory

Yin Zhang, Jie Feng, Zufa Zhang et al. · Applied Surface Science · 2008 · 34 citations

Engineering, Materials Engineering, Materials Science +14