Plasma Si nitride—A promising dielectric to achieve high-quality silicon MIS/IL solar cells

Abstract

Substantial advantages of plasma Si nitride, for the first time applied to silicon MIS inversion layer (MIS/IL) solar cells, are demonstrated: The highest positive interface charge densities ever used for this type of solar cell (up to 7.2×1012 cm−2), absolute stability of the charges up to the nitride despoition temperature (220 and 300 °C, respectively), excellent passivation of the entire cell, and good AR coating properties. High uv sensitive MIS/IL solar cells were fabricated with these layers on p–Si (100). AM1 efficiencies of 15% (active area) at 25 °C were obtained.