2006 · 33 citations · 4 references
EngineeringElectrical EngineeringMicrowave EngineeringSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesIii-v SemiconductorsMicrowave AmplifiersMicrowave Semiconductor DevicesPower AmplifiersSemiconductor HeterostructuresBandwidthGallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Power AmplifiersGan-based High-frequency DevicesHigh-efficiency Power AmplifiersHigh-gain AmplifiersPower Amplifier Design
A high-power amplifier using two 28.8-mm-periphery GaN HEMTs was demonstrated with all matching components inside the package. When biased at 55 V, a power bandwidth of 3.3-3.6 GHz was obtained, with 550-Wpeak output, 12.5-dB associated gain and 66% drain efficiency at 3.45 GHz
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30-W/mm GaN HEMTs by Field Plate Optimization
Yifeng Wu, A. Saxler, M. Moore et al. · IEEE Electron Device Letters · 2004 · 1.1K citations
40-W/mm Double Field-plated GaN HEMTs
Yifeng Wu, M. Moore, A. Saxler et al. · 2006 · 339 citations