Stress control in GaN/sapphire templates for the fabrication of crack-free thick layers

Crystallite coalescence: A mechanism for intrinsic tensile stresses in thin films

William D. Nix, B Clemens · Journal of materials research/Pratt's guide to venture capital sources · 1999 · 650 citations

Natural Sciences, Materials Engineering, Materials Science +16

Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry

Bernard Gil, O. Briot, Roger-Louis Aulombard · Physical review. B, Condensed matter · 1995 · 311 citations

Natural Sciences, Materials Science, Physics +17

Growth of gallium nitride by hydride vapor-phase epitaxy

R. J. Molnar, Werner Götz, Lucia Romano et al. · Journal of Crystal Growth · 1997 · 232 citations

Engineering, Materials Engineering, Materials Science +13

The role of high-temperature island coalescence in the development of stresses in GaN films

T. Böttcher, S. Einfeldt, S. Figge et al. · Applied Physics Letters · 2001 · 191 citations

Natural Sciences, Materials Engineering, Materials Science +17

Cracking of GaN films

E. V. Etzkorn, D. R. Clarke · Journal of Applied Physics · 2001 · 158 citations

Engineering, Materials Engineering, Materials Science +17