D. Martin

Exciton Binding Energy in GaAs V-Shaped Quantum Wires

R. Rinaldi, R. Cingolani, Maria Lepore et al. · Physical Review Letters · 1994 · 134 citations · Full text

Semiconductors, Quantum Science, Photonics +13

Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency

Camille Haller, J.‐F. Carlin, Gwénolé Jacopin et al. · Applied Physics Letters · 2017 · 131 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Ingan Ul +14

GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells

Camille Haller, J.‐F. Carlin, Gwénolé Jacopin et al. · Applied Physics Letters · 2018 · 117 citations · Full text

Wide-bandgap Semiconductor, Engineering, Semiconductors +17

InGaN based micro light emitting diodes featuring a buried GaN tunnel junction

Marco Malinverni, D. Martin, N. Grandjean · Applied Physics Letters · 2015 · 93 citations · Full text

Wide-bandgap Semiconductor, Engineering, Electroluminescence Mapping +16

Critical impact of Ehrlich–Schwöbel barrier on GaN surface morphology during homoepitaxial growth

Nils Asmus Kristian Kaufmann, Lise Lahourcade, B. Hourahine et al. · Journal of Crystal Growth · 2015 · 81 citations · Full text

Wide-bandgap Semiconductor, Epitaxial Growth, Engineering +8