Nils Asmus Kristian Kaufmann

Critical impact of Ehrlich–Schwöbel barrier on GaN surface morphology during homoepitaxial growth

Nils Asmus Kristian Kaufmann, Lise Lahourcade, B. Hourahine et al. · Journal of Crystal Growth · 2015 · 81 citations · Full text

Wide-bandgap Semiconductor, Epitaxial Growth, Engineering +8

Strain compensation in AlInN/GaN multilayers on GaN substrates: Application to the realization of defect-free Bragg reflectors

Gatien Cosendey, J.‐F. Carlin, Nils Asmus Kristian Kaufmann et al. · Applied Physics Letters · 2011 · 57 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Peak Reflectivity +12

Thermal annealing of molecular beam epitaxy-grown InGaN/GaN single quantum well

Nils Asmus Kristian Kaufmann, A. Dussaigne, D. Martin et al. · Semiconductor Science and Technology · 2012 · 16 citations · Full text

Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green

P. Ruterana, Jean‐Louis Doualan, M. P. Chauvat et al. · physica status solidi (b) · 2011 · 15 citations · Full text

Engineering, Ingan/gan Quantum Wells, Optical Properties +16