A. Dussaigne

Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy

Stéphane Brochen, J. Brault, Sébastien Chenot et al. · Applied Physics Letters · 2013 · 128 citations

Engineering, Materials Engineering, Materials Science +16

Enhanced In incorporation in full InGaN heterostructure grown on relaxed InGaN pseudo-substrate

A. Even, G. Laval, Olivier Ledoux et al. · Applied Physics Letters · 2017 · 124 citations

Engineering, Materials Science, Physics +17

Direct Imaging of p–n Junction in Core–Shell GaN Wires

Pierre Tchoulfian, Fabrice Donatini, François Lévy et al. · Nano Letters · 2014 · 83 citations

Engineering, Materials Engineering, Materials Science +17

Full InGaN red light emitting diodes

A. Dussaigne, Frédéric Barbier, B. Damilano et al. · Journal of Applied Physics · 2020 · 79 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Full InGaN red (625 nm) micro-LED (10 μm) demonstration on a relaxed pseudo-substrate

A. Dussaigne, Patrick Le Maître, Helge Haas et al. · Applied Physics Express · 2021 · 78 citations

Engineering, Electrical Engineering, Materials Science +17