A. Dussaigne

Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy

Stéphane Brochen, J. Brault, Sébastien Chenot et al. · Applied Physics Letters · 2013 · 125 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +10

Enhanced In incorporation in full InGaN heterostructure grown on relaxed InGaN pseudo-substrate

A. Even, G. Laval, Olivier Ledoux et al. · Applied Physics Letters · 2017 · 121 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +14

Direct Imaging of p–n Junction in Core–Shell GaN Wires

Pierre Tchoulfian, Fabrice Donatini, François Lévy et al. · Nano Letters · 2014 · 83 citations

Semiconductors, Materials Science, Electrical Engineering +15

Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

Pierre Corfdir, Pierre Lefèbvre, Jacques Levrat et al. · Journal of Applied Physics · 2009 · 74 citations · Full text

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +15

Full InGaN red light emitting diodes

A. Dussaigne, Frédéric Barbier, B. Damilano et al. · Journal of Applied Physics · 2020 · 73 citations · Full text

Optical Materials, Engineering, Optoelectronic Devices +18