Frédéric Barbier

Full InGaN red light emitting diodes

A. Dussaigne, Frédéric Barbier, B. Damilano et al. · Journal of Applied Physics · 2020 · 73 citations · Full text

Optical Materials, Engineering, Optoelectronic Devices +18

Full InGaN red (625 nm) micro-LED (10 μm) demonstration on a relaxed pseudo-substrate

A. Dussaigne, Patrick Le Maître, Helge Haas et al. · Applied Physics Express · 2021 · 73 citations

Fully Optimized Cu based process with dedicated cavity etch for 1.75μm and 1.45μm pixel pitch CMOS Image Sensors

Muriel Cohen, F. Roy, Didier Hérault et al. · 2006 · 45 citations · Full text

Electrical Engineering, Wafer Scale Processing, Engineering +13

Strongly reduced V pit density on InGaNOS substrate by using InGaN/GaN superlattice

A. Dussaigne, Frédéric Barbier, B. Samuel et al. · Journal of Crystal Growth · 2020 · 26 citations · Full text

Materials Science, Materials Engineering, Wide-bandgap Semiconductor +9

Determination of the internal piezoelectric potentials and indium concentration in InGaN based quantum wells grown on relaxed InGaN pseudo-substrates by off-axis electron holography

David Cooper, Victor Boureau, A. Even et al. · Nanotechnology · 2020 · 21 citations · Full text

Wide-bandgap Semiconductor, Engineering, Relaxed Ingan Pseudo-substrates +17