Publication | Open Access
Exciton Binding Energy in GaAs V-Shaped Quantum Wires
134
Citations
16
References
1994
Year
SemiconductorsQuantum SciencePhotonicsExciton Binding EnergyEngineeringPhysicsExciton Bohr RadiusQuantum DeviceQuasi-one-dimensional ExcitonsApplied PhysicsQuantum MaterialsActual Wire GeometryQuantum Photonic DeviceLow-dimensional SystemOptoelectronicsCompound Semiconductor
We have determined the main parameters of the quasi-one-dimensional excitons confined in GaAs V-shaped quantum wires, namely exciton Bohr radius and binding energy, by two-photon absorption and magnetoluminescence experiments. The experimental results are in excellent agreement with our calculations, based on realistic wave functions for the actual wire geometry.
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