Construction of silicon nanocolumns with the scanning tunneling microscope

Abstract

Voltage pulses to a scanning tunneling microscope (STM) are used to construct silicon columns of 30–100 Å diameter and up to 200 Å height on a silicon surface and on the end of a tungsten probe. These nanocolumns have excellent conductivity and longevity, and they provide an exceptional new ability to measure the shapes of nanostructures with a STM. This construction methodology and these slender yet robust columns provide a basis for nanoscale physics, lithography, and technology.