Concepedia

Lattice parameters of GaN single crystals, homoepitaxial layers and heteroepitaxial layers on sapphire

M. Leszczyński, P. Prystawko, T. Suski, B. Łucznik, J. Z. Domagała, J. Bąk‐Misiuk, A. Stonert, A. Turos, R. Langer, A. Barski

Journal of Alloys and Compounds · 1999 · 24 citations · 13 references

DOI

Concepts

References

13

Strain-related phenomena in GaN thin films

C. Kisielowski, Joachim Krüger, S. Ruvimov et al. · Physical review. B, Condensed matter · 1996 · 886 citations

, , +17

Lattice parameters of gallium nitride

M. Leszczyński, H. Teisseyre, T. Suski et al. · Applied Physics Letters · 1996 · 418 citations

, , +17

Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Applied Physics Letters · 1998 · 336 citations

, , +17

Thermal expansion of gallium nitride

M. Leszczyński, T. Suski, H. Teisseyre et al. · Journal of Applied Physics · 1994 · 225 citations

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Thermodynamical properties of III–V nitrides and crystal growth of GaN at high N2 pressure

S. Porowski, I. Grzegory · Journal of Crystal Growth · 1997 · 184 citations

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