Dislocation density reduction in CdZnTe(100) on GaAs using strained layer superlattices

Abstract

We have inserted Cd0.91Zn0.09Te/CdTe(100) strained layer superlattices of various periods into Cd0.955Zn0.045Te grown on GaAs(100). X-ray diffraction was used as a means to optimize the period of the strained layer superlattice to maximize the quality of the material. Transmission electron microscopy demonstrated that a dramatic decrease (a total of five orders of magnitude) in the dislocation density occurred due to the insertion of the strained layer superlattices. The dislocation density achieved is in a range usable as a substrate material for HgCdTe infrared detectors.