The dielectric properties enhancement due to Yb incorporation into HfO2

Abstract

The effects of Yb concentration and annealing temperature on the dielectric constant change of Yb-doped HfO2 thin film were investigated. The results show that the dielectric constant of Yb-doped HfO2 increased when doping with Yb after annealing. Compared with the undoped HfO2, the dielectric constant enhancement may result from the crystallographic change from monoclinic phase to the cubic phase. The Yb-doped HfO2 exhibited a lower leakage current than that of undoped HfO2 thin film. The electrical characteristics of Yb-doped HfO2 thin film illustrated that it is a promising gate dielectric layer for future high dielectric constant (high-k) gate dielectric applications.