Sub-50 nm feature sizes using positive tone molecular glass resists for EUV lithography

Abstract

Extreme ultra violet (EUV) lithography is one of the most promising next generation lithographic techniques for the production of sub-50 nm feature sizes with applications in the semiconductor industry. Coupling this technique with molecular glass resists is an effective strategy for high resolution lithographic patterning. In this study, a series of tert-butyloxycarbonyl (t-Boc) protected C-4-hydroxyphenyl-calix[4]resorcinarenes derivatives were synthesized and evaluated as positive tone molecular glass resists for EUV lithography. The amorphous nature of these molecules was confirmed using thermal analysis, FTIR and powder X-ray diffraction. Feature sizes as small as 30 nm with low line edge roughness (4.5 nm, 3σ) were obtained after patterning and development.