Japanese Journal of Applied Physics · 2002 · 41 citations · 3 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor MaterialsLight SourcesLight-emitting DiodesLuminescent MaterialsSemiconductor Device MaterialsSemiconductor HeterostructuresWide Band Gap SemiconductorsAluminum Gallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Light-emitting DiodesLight-emitting DevicesLight-emitting Diode Materials
Light emitting diodes with peak emission at 324 nm were fabricated over low-defect density n+-Al0.2Ga0.8N buffer layers. The AlGaN buffer layers were deposited over sapphire using strain-relieving AlN/AlGaN superlattices. Pulsed powers as high as 4 mW were measured for a pump current of 900 mA.
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