Akihiko Ishibashi

Air-bridged lateral epitaxial overgrowth of GaN thin films

I. Kidoguchi, Akihiko Ishibashi, Gaku Sugahara et al. · Applied Physics Letters · 2000 · 83 citations

Engineering, Materials Engineering, Materials Science +17

Residual impurities in GaN/Al2O3 grown by metalorganic vapor phase epitaxy

Akihiko Ishibashi, Hidemi Takeishi, M. Mannoh et al. · Journal of Electronic Materials · 1996 · 46 citations

Engineering, Materials Engineering, Materials Science +15

Temperature dependence of localized exciton transitions in AlGaN ternary alloy epitaxial layers

Hideaki Murotani, Yoichi Yamada, Tsunemasa Taguchi et al. · Journal of Applied Physics · 2008 · 36 citations

Natural Sciences, Materials Engineering, Materials Science +17

Improvement of Crystalline Quality in GaN Films by Air-Bridged Lateral Epitaxial Growth

I. Kidoguchi, Akihiko Ishibashi, Gaku Sugahara et al. · Japanese Journal of Applied Physics · 2000 · 27 citations

Engineering, Materials Engineering, Materials Science +17

High-quality GaN films obtained by air-bridged lateral epitaxial growth

Akihiko Ishibashi, I. Kidoguchi, Gaku Sugahara et al. · Journal of Crystal Growth · 2000 · 26 citations

Engineering, Materials Engineering, Materials Science +14