Gaku Sugahara

Air-bridged lateral epitaxial overgrowth of GaN thin films

I. Kidoguchi, Akihiko Ishibashi, Gaku Sugahara et al. · Applied Physics Letters · 2000 · 83 citations

Engineering, Materials Engineering, Materials Science +17

Room Temperature 339 nm Emission from Al_0.13Ga_0.87N/Al_0.10Ga_0.90N Double Heterostructure Light-Emitting Diode on Sapphire Substrate

Nobuyuki Otsuka, Ayumu Tsujimura, Yoshiaki Hasegawa et al. · Japanese Journal of Applied Physics · 2000 · 39 citations

Engineering, Electrical Engineering, Materials Science +17

Improvement of Crystalline Quality in GaN Films by Air-Bridged Lateral Epitaxial Growth

I. Kidoguchi, Akihiko Ishibashi, Gaku Sugahara et al. · Japanese Journal of Applied Physics · 2000 · 27 citations

Engineering, Materials Engineering, Materials Science +17

High-quality GaN films obtained by air-bridged lateral epitaxial growth

Akihiko Ishibashi, I. Kidoguchi, Gaku Sugahara et al. · Journal of Crystal Growth · 2000 · 26 citations

Engineering, Materials Engineering, Materials Science +14

Low‐dislocation density AlGaN layer by air‐bridged lateral epitaxial growth

Yasutoshi Kawaguchi, Gaku Sugahara, Atsunori Mochida et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2003 · 16 citations

Engineering, Materials Engineering, Materials Science +17