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Room Temperature 339 nm Emission from Al<sub>0.13</sub>Ga<sub>0.87</sub>N/Al<sub>0.10</sub>Ga<sub>0.90</sub>N Double Heterostructure Light-Emitting Diode on Sapphire Substrate
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2000
Year
Aluminium NitrideWide-bandgap SemiconductorEngineeringSapphire SubstrateOptoelectronic DevicesSemiconductorsGa 0.87NanoelectronicsNm EmissionRoom Temperature 339Electrical EngineeringPhotoluminescencePhysicsGa 0.90Optoelectronic MaterialsAluminum Gallium NitrideGallium OxideMicroelectronicsCategoryiii-v SemiconductorRoom-temperature Deep-ultraviolet EmissionSolid-state LightingApplied PhysicsOptoelectronics
Room-temperature deep-ultraviolet emission has been observed from Al 0.13 Ga 0.87 N/Al 0.10 Ga 0.90 N double heterostructure light-emitting diodes (LEDs) on (0001)-oriented sapphire substrate. By introducing undoped barrier layers, which sandwich the active layer, the LED was operated at a peak emission wavelength of 339 nm with a narrow linewidth of 5.6 nm. The dependence of emission intensity on injection current suggests that the nonradiative recombination was suppressed and the diffusion current for the recombination process was dominant at the injection current of over 20 mA.
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