M. Mannoh

Influence of growth conditions and alloy composition on deep electron traps of <i>n</i>-Al<i>x</i>Ga1−<i>x</i>As grown by MBE

Ken‐ichi Yamanaka, Shigeya Naritsuka, M. Mannoh et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1984 · 47 citations

Engineering, Materials Engineering, Materials Science +14

Residual impurities in GaN/Al2O3 grown by metalorganic vapor phase epitaxy

Akihiko Ishibashi, Hidemi Takeishi, M. Mannoh et al. · Journal of Electronic Materials · 1996 · 46 citations

Engineering, Materials Engineering, Materials Science +15

Through recessed and regrowth gate technology for realizing process stability of GaN-GITs

Hideyuki Okita, Masahiro Hikita, Akihiko Nishio et al. · 2016 · 41 citations

Engineering, Electrical Engineering, Electronic Materials +13

Composition dependence of photoluminescence of Al<i>x</i>Ga1−<i>x</i>As grown by molecular beam epitaxy

M. Mihara, Y. Nomura, M. Mannoh et al. · Journal of Applied Physics · 1984 · 37 citations

Engineering, Materials Engineering, Materials Science +16

Through Recess and Regrowth Gate Technology for Realizing Process Stability of GaN-Based Gate Injection Transistors

Hideyuki Okita, Masahiro Hikita, Akihiko Nishio et al. · IEEE Transactions on Electron Devices · 2017 · 33 citations

Engineering, Electrical Engineering, Materials Science +13