Influence of growth conditions and alloy composition on deep electron traps of <i>n</i>-Al<i>x</i>Ga1−<i>x</i>As grown by MBE

Ken‐ichi Yamanaka, Shigeya Naritsuka, M. Mannoh, +4

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Materials ScienceSemiconductorsPhotoluminescenceGrowth TemperatureEngineering +13

Composition dependence of photoluminescence of Al<i>x</i>Ga1−<i>x</i>As grown by molecular beam epitaxy

M. Mihara, Y. Nomura, M. Mannoh, +5

Journal of Applied Physics

EngineeringDefect ExcitonOptoelectronic DevicesDefect-exciton PeakLuminescence Property +15

Bound excitons in Si-doped GaAs/Al0.22Ga0.78As single quantum wells

Y. Nomura, Keisuke Shinozaki, Masashi Ishii

Journal of Applied Physics

SemiconductorsLocalized Si DopingSemiconductor TechnologyPhotoluminescenceEngineering +10

Molecular Beam Epitaxy of GaAs/AlAs on Mesa Stripes along the [001] Direction for Quantum-Wire Fabrication

M. López‐López, Tomonori Ishikawa, Y. Nomura

Japanese Journal of Applied Physics

Materials ScienceSemiconductorsGaas GrowthEngineeringPhysics +12

Laser-assisted coherent atomic tunneling between two trapped Bose-Einstein condensates

Noriaki Tsukada, Mitsunobu Gotoda, Y. Nomura, +1

Physical Review A

Quantum DynamicQuantum ScienceEngineeringPhysicsPopulation Imbalance +12

Defect-related emissions in photoluminescence spectra of Al<i>x</i>Ga1−<i>x</i>As grown by molecular beam epitaxy

M. Mihara, Y. Nomura, M. Mannoh, +5

Journal of Applied Physics

EngineeringDefect ExcitonChemistryLuminescence PropertySemiconductors +14

Ionized Mg doping in molecular-beam epitaxy of GaAs

M. Mannoh, Y. Nomura, Keisuke Shinozaki, +2

Journal of Applied Physics

Optical Kerr gate switching of AlGaAs/AlAs multilayer structures without pattern effects by the two‐photon resonant nonlinear response

Toshiro Isu, K. Akiyama, Naohito Tomita, +3

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

Optical MaterialsEngineeringPattern EffectsOptoelectronic DevicesOptical Properties +16

Surface Cleaning of Si-Doped/Undoped GaAs Substrates

Shigeo Goto, Masamichi Yamada, Y. Nomura

Japanese Journal of Applied Physics

Surface CharacterizationSi DopantChemical EngineeringElectrical EngineeringResidual Carbon +10

Observation of plasmons coupled with optical phonons in <i>n</i>-Al<i>x</i>Ga1−<i>x</i>As by Raman scattering

T. Yuasa, Shigeya Naritsuka, M. Mannoh, +5

Applied Physics Letters

Aluminium NitrideOptical MaterialsEngineeringSurface-enhanced Raman ScatteringLo Phonon Lines +14