Y. Nomura

Influence of growth conditions and alloy composition on deep electron traps of <i>n</i>-Al<i>x</i>Ga1−<i>x</i>As grown by MBE

Ken‐ichi Yamanaka, Shigeya Naritsuka, M. Mannoh et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1984 · 47 citations

Engineering, Materials Engineering, Materials Science +14

Composition dependence of photoluminescence of Al<i>x</i>Ga1−<i>x</i>As grown by molecular beam epitaxy

M. Mihara, Y. Nomura, M. Mannoh et al. · Journal of Applied Physics · 1984 · 37 citations

Engineering, Materials Engineering, Materials Science +16

Bound excitons in Si-doped GaAs/Al0.22Ga0.78As single quantum wells

Y. Nomura, Keisuke Shinozaki, Masashi Ishii · Journal of Applied Physics · 1985 · 34 citations

Engineering, Materials Science, Optoelectronics +14

Molecular Beam Epitaxy of GaAs/AlAs on Mesa Stripes along the [001] Direction for Quantum-Wire Fabrication

Tomonori Ishikawa, Y. Nomura · Japanese Journal of Applied Physics · 1993 · 33 citations

Engineering, Electrical Engineering, Materials Science +17

Laser-assisted coherent atomic tunneling between two trapped Bose-Einstein condensates

Noriaki Tsukada, Mitsunobu Gotoda, Y. Nomura et al. · Physical Review A · 1999 · 32 citations

Natural Sciences, Physics, Atomic Physics +16