Bound excitons in Si-doped GaAs/Al0.22Ga0.78As single quantum wells

Abstract

GaAs/Al0.22Ga0.78As single quantum wells with localized Si doping were grown by molecular beam epitaxy. Low-temperature (1.8, 4.2 K) photoluminescence due to excitons bound to Si donors, which were located at the center of wells, was observed. The binding energies of the exciton are 1.8–1.3 meV for well widths ranging from 7.4–15.4 nm, and substantially agree with the theoretical results obtained by Kleinman [Phys. Rev. B 28, 871 (1983)].