Applied Physics Letters · 1994 · 32 citations · 13 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesSemiconductor Thin FilmsChemical Beam EpitaxyMolecular Beam EpitaxyPassivation MechanismsSchottky Barrier CharacteristicsSchottky Barrier ContactsSchottky Barrier DiodesSchottky Barrier Height EngineeringSchottky Barriers
Al/Si/GaAs(001) diode structures grown by molecular beam epitaxy were examined as a function of the thickness of the Si interface layer and the intensity of the As or Al flux employed during Si deposition. We found that Schottky barriers as low as 0.3–0.4 eV (in the presence of a sufficiently high As flux) or as high as 1.0–1.1 eV (in the presence of a sufficiently high Al flux) can be established on n-type GaAs at Si coverages in the submonolayer to monolayer range. We therefore associate the tunability of the barrier height with a Si-induced local interface dipole.
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Polar heterojunction interfaces
Walter A. Harrison, E. A. Kraut, J. R. Waldrop et al. · Physical review. B, Condensed matter · 1978 · 628 citations
Natural Sciences, Materials Engineering, Materials Science +17