A. Mu�oz

Modification of heterojunction band offsets by thin layers at interfaces: Role of the interface dipole

A. Mu�oz, N. Chetty, Richard M. Martin · Physical review. B, Condensed matter · 1990 · 110 citations

Wide-bandgap Semiconductor, Engineering, Double Layer +19

High-pressure phase of gallium nitride

A. Mu�oz, K. Kunc · Physical review. B, Condensed matter · 1991 · 98 citations

High-pressure Phase, Crystal Structure, Wide-bandgap Semiconductor +9

First-principles calculation of the elastic constants of AlAs

N. Chetty, A. Mu�oz, Richard M. Martin · Physical review. B, Condensed matter · 1989 · 62 citations

Aluminium Nitride, Engineering, First-principles Calculation +18

Theoretical Study of the Elastic Properties of III-P Compounds

M. J. Herrera‐Cabrera, P. Rodr�guez-Hern�ndez, A. Mu�oz · physica status solidi (b) · 2001 · 52 citations

Engineering, Continuum Mechanic, Pressure Dependence +19

AlX (X = As, P, Sb) Compounds under Pressure

A. Mújica, P. Rodr�guez-Hern�ndez, S. Radescu et al. · physica status solidi (b) · 1999 · 47 citations

Materials Engineering, Inorganic Chemistry, Materials Science +14