C–V dependence of inhomogeneous Schottky diodes

A self-consistent iterative scheme for one-dimensional steady state transistor calculations

H.K. Gummel · IEEE Transactions on Electron Devices · 1964 · 1.1K citations

Numerical Analysis, Engineering, Dc Potentials +19

Electron transport of inhomogeneous Schottky barriers: A numerical study

James P. Sullivan, R. T. Tung, M.R. Pinto et al. · Journal of Applied Physics · 1991 · 732 citations

Electrical Engineering, Engineering, Physics +14

On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers

Y.P. Song, R.L. Van Meirhaeghe, W.H. Laflère et al. · Solid-State Electronics · 1986 · 556 citations

Electrical Engineering, Semiconductor Device, Engineering +8

Origin of the Excess Capacitance at Intimate Schottky Contacts

J. H. Werner, A. F. J. Levi, R. T. Tung et al. · Physical Review Letters · 1988 · 219 citations

Electrical Engineering, Excess Capacitance, Engineering +14

Influence of barrier height distribution on the parameters of Schottky diodes

Edmund Dobročka, J. Osvald · Applied Physics Letters · 1994 · 173 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +9