Tantalum carbide and nitride diffusion barriers for Cu metallisation

An assessment of the Fe-C-Si system

Jacques Lacaze, Bo Sundman · Metallurgical Transactions A · 1991 · 299 citations

Natural Sciences, Materials Science, Electronic Materials +2

Electrical properties and recombination activity of copper, nickel and cobalt in silicon

A. A. Istratov, E. R. Weber · Applied Physics A · 1998 · 252 citations

Engineering, Materials Engineering, Materials Science +14

Formation of copper silicides from Cu(100)/Si(100) and Cu(111)/Si(111) structures

Chin‐An Chang · Journal of Applied Physics · 1990 · 251 citations

Engineering, Materials Engineering, Materials Science +14

Gibbs energy coupling of the phase diagram and thermochemistry in the tantalum-carbon system

Karin Frisk, A. Fernández Guillermet · Journal of Alloys and Compounds · 1996 · 91 citations

Natural Sciences, Materials Engineering, Materials Science +16

Failure mechanism of Ta diffusion barrier between Cu and Si

Tomi Laurila, Kejun Zeng, J.K. Kivilahti et al. · Journal of Applied Physics · 2000 · 90 citations

Engineering, Materials Engineering, Materials Science +17