A 0.85 THz Low Noise Amplifier Using InP HEMT Transistors

Abstract

In this letter, the first packaged THz solid-state amplifier operating at 0.85 THz is reported. The InP HEMT amplifier achieves a noise figure as low as 11.1 dB with an associated gain of 13.6 dB at 0.85 THz using high <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">${\bf f}_{\bf MAX}$</tex></formula> InP HEMT transistors in a 10-stage coplanar waveguide integrated circuit. Output power up to 0.93 mW is measured.