InP HBT amplifier MMICs operating to 0.67 THz

Abstract

Two indium-phosphide (InP) double-heterojunction bipolar transistor (DHBT) based terahertz monolithic integrated circuit (TMIC) amplifiers are reported with record operating bandwidths up to 694 GHz. The first amplifier uses 3 μm long emitter transistors, has 24 dB gain at 670 GHz, and a saturated output power of -4 dBm at 585 GHz. The second amplifier uses 6 μm long emitter transistors, has 20 dB gain at 655 GHz, and a saturated output power of -0.7 dBm at 585 GHz. Both TMICs use Teledyne's 130nm InP DHBT transistors in a common base configuration and are matched using inverted CPW transmission lines realized using a three-metal-layer high-density thin-film interconnects system. These results demonstrate the capability of 130nm InP DHBT technology to enable sophisticated TMIC circuits for operation in the terahertz band.