Jose G. Padilla

First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process

X. B. Mei, Wayne Yoshida, M. Lange et al. · IEEE Electron Device Letters · 2015 · 404 citations

Engineering, Electrical Engineering, Physics +14

A 0.85 THz Low Noise Amplifier Using InP HEMT Transistors

K.M.K.H. Leong, X. B. Mei, Wayne Yoshida et al. · IEEE Microwave and Wireless Components Letters · 2015 · 81 citations

Engineering, Electrical Engineering, Microelectronics +14

850 GHz Receiver and Transmitter Front-Ends Using InP HEMT

K.M.K.H. Leong, X. B. Mei, Wayne Yoshida et al. · IEEE Transactions on Terahertz Science and Technology · 2017 · 76 citations

Engineering, Electrical Engineering, Materials Science +17

A Submillimeter Wave InP HEMT Multiplier Chain

Alexis Zamora, Gerry Mei, K.M.K.H. Leong et al. · IEEE Microwave and Wireless Components Letters · 2015 · 27 citations

Engineering, Electrical Engineering, Electronic Materials +14

Demonstration of a Sub-Millimeter Wave Integrated Circuit (S-MMIC) using InP HEMT with a 35-nm Gate

W.R. Deal, Salah Din, V. Radisic et al. · 2006 · 27 citations

Engineering, Electrical Engineering, Microelectronics +16