Consideration of the frequency performance potential of GaAs homojunction and heterojunction n-p-n transistors

Abstract

A study is made of the expected frequency performance of n-p-n GaAs homojunction transistors and n-p-n AlGaAs-GaAs heterojunction transistors. The analysis suggests that if parasitic base resistance is minimized in the homojunction transistor design, the frequency performance should be comparable to that of heterojunction transistors of similar dimensions.