Applied Physics Letters · 1995 · 15 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsAmorphous SemiconductorsDefects In Electronic MaterialsDopingThermal DiffusivityThermal Properties Of MaterialsThermal Properties Of SemiconductorsAmorphous DefectsCharge-exchange ReactionsDoping BehaviorIn-situ DopingIndium Gallium PhosphideIndium PhosphideP-type DopingThermal Stability
We investigated the thermally induced redistribution of Rh in low pressure MOCVD grown InP structures by means of secondary-ion-mass-spectroscopy. Analogous measurements for InP:Fe structures serve as reference. On alternately Rh-doped/undoped InP structures an upper limit for the diffusion coefficient of DRh(800 °C)≤1×10−14 cm2/s is established much smaller than DFe(750 °C)=1×10−11 cm2/s. No exchange reactions are observed at the interface of p-InP/InP:Rh structures. Only Rh implanted into InP shows defect induced redistribution into amorphous areas. Rh is superior to Fe as far as thermal stability is concerned.