Concepedia

In-depth profiles of phosphorus ion-implanted silicon by Auger spectroscopy and secondary ion emission

J.M. Morabito, J. C. C. Tsai

Surface Science · 1972 · 39 citations · 2 references

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Concepts

References

Concepts

EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsSpectroscopyDevice CharacterizationElectronic Material CharacterizationInorganic SpectroscopyIon ImplantationSemiconductor Device MaterialsSilicon MaterialsAuger IonizationAuger Line Shape AnalysisPeak Shape AnalysisSecondary Electron EmissionSecondary Ion ProductionSiliconSilicon CharacterizationSilicon Doping

References

2

Ion-Implanted Phosphorous in Silicon: Profiles Using <i>C-V</i> Analysis

R.A. Moline · Journal of Applied Physics · 1971 · 63 citations

Engineering, Materials Engineering, Materials Science +16

Annealing characteristics of highly doped ion implanted phosphorus layers in silicon

J. M. Shannon, R.A. Ford, G.A. Gard · Radiation Effects · 1970 · 15 citations

Engineering, Materials Engineering, Materials Science +17