R.A. Moline - Concepedia

Author

R.A. Moline

Murray State University

Also Known As

R. A. MOLINE, R. A. Moline, R.A. Moline

Publications

333

Citations

H-Index

Concepts

All Affiliations

Murray State University

About

R.A. Moline is an author at Murray State University specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	280
2	Applied Physics	9	9	280
3	Electrical Engineering	5	5	114
4	Materials Engineering	3	3	103
5	Natural Sciences	1	1	10

R.A. Moline

Publications

280

Citations

H-Index

Page 1

	Year	Citations
Residual defects in Si produced by recoil implantation of oxygen R.A. Moline, A. G. Cullis Applied Physics Letters Materials EngineeringMaterials ScienceSemiconductorsIon ImplantationEngineering	1975	70
Ion-Implanted Phosphorous in Silicon: Profiles Using <i>C-V</i> Analysis R.A. Moline Journal of Applied Physics Semiconductor TechnologyIon ImplantationEngineeringPhysicsCrystalline Defects	1971	63
Fully ion-implanted bipolar transistors Robert Payne, R. J. Scavuzzo, Kevin Olson, IEEE Transactions on Electron Devices SemiconductorsSemiconductor TechnologyElectrical EngineeringIon ImplantationEngineering	1974	51
Ion-implanted hyperabrupt junction voltage variable capacitors R.A. Moline, G.F. Foxhall IEEE Transactions on Electron Devices Electrical EngineeringIon ImplantationEngineeringVoltage Variable CapacitorsApplied Physics	1972	32
Tapered windows in SiO<sub>2</sub>by ion implantation R.A. Moline, Robert Buckley, S. E. Haszko, IEEE Transactions on Electron Devices Materials EngineeringIon ImplantationEngineeringTaper StepsApplied Physics	1973	22
The Growth of High Quality Epitaxial Silicon over Ion Implanted Buried Arsenic Layers R.A. Moline, Robert Lieberman, J.R. Simpson, Journal of The Electrochemical Society Materials EngineeringMaterials ScienceIon ImplantationSemiconductor TechnologyEngineering	1974	11
Self-aligned maskless chan stops for IGFET integrated circuits R.A. Moline, G.W. Reutlinger IEEE Transactions on Electron Devices EngineeringField OxideSelf-aligned Maskless ChanOptoelectronic DevicesIntegrated Circuits	1973	11
Charge Exchange Cross Sections for Electron Loss from B+, P+, and N+ on N2 R.A. Moline Journal of Applied Physics EngineeringNuclear PhysicsDouble Electron LossIon Beam InstrumentationElectron Loss	1971	10
Transistors with boron bases predeposited by ion implantation and annealed in various oxygen ambients Thomas E. Seidel, Robert Payne, R.A. Moline, IEEE Transactions on Electron Devices Electrical EngineeringBase ResistorsTransistor GainEngineeringIon Implantation	1977	10

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