Response to “Comment on ‘AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy’ ” [Appl. Phys. Lett. <b>83</b>, 3626 (2003)]

AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy

Akihiko Kikuchi, R. Bannai, Katsumi Kishino et al. · Applied Physics Letters · 2002 · 129 citations

Engineering, Electrical Engineering, Materials Science +17

Comment on “AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. <b>81</b>, 1729 (2002)]

A. E. Belyaev, C. T. Foxon, O. Makarovsky et al. · Applied Physics Letters · 2003 · 41 citations · Full text

Engineering, Electrical Engineering, Electronic Materials +11

Improved Molecular Beam Epitaxy for Fabricating AlGaN/GaN Heterojunction Devices

Katsumi Kishino, Akihiko Kikuchi · physica status solidi (a) · 2002 · 30 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

AlGaN Resonant Tunneling Diodes Grown by rf-MBE

Akihiko Kikuchi, R. Bannai, Katsumi Kishino · physica status solidi (a) · 2001 · 25 citations

Engineering, Electrical Engineering, Materials Science +17

Modelling of Polarization Charge-Induced Asymmetry of I-V Characteristics of AlN/GaN-Based Resonant Tunnelling Structures

K. M. Indlekofer, E. Don�, J. Malindretos et al. · physica status solidi (b) · 2002 · 18 citations

Engineering, Electrical Engineering, Materials Science +17