O. Makarovsky

Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics

Thanasis Georgiou, R. Jalil, Branson D. Belle et al. · Nature Nanotechnology · 2012 · 1.7K citations · Full text

Materials Science, Electrical Engineering, Graphene Quantum Dot +9

Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement

Garry W. Mudd, Simon A. Svatek, Tianhang Ren et al. · Advanced Materials · 2013 · 612 citations · Full text

Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures

Artem Mishchenko, J. S. Tu, Yun Cao et al. · Nature Nanotechnology · 2014 · 503 citations · Full text

Twist-controlled Resonant Tunnelling, Graphene Nanomeshes, Engineering +4

High Broad‐Band Photoresponsivity of Mechanically Formed InSe–Graphene van der Waals Heterostructures

Garry W. Mudd, Simon A. Svatek, Lee Hague et al. · Advanced Materials · 2015 · 367 citations · Full text

The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals

Garry W. Mudd, Maciej R. Molas, X. Chen et al. · Scientific Reports · 2016 · 198 citations · Full text