O. Makarovsky - Concepedia

Author

O. Makarovsky

Also Known As

Makarovsky, O., Makarovsky, O. N., Makarovsky, Oleg, O Makarovsky, O N Makarovsky, O. Makarovsky, O.N. Makarovsky, Oleg Makarovsky

112

Publications

5.5K

Citations

H-Index

Concepts

All Affiliations

University of Nottingham National Academy of Sciences of Ukraine Frantsevich Institute for Problems in Materials Science University of Manchester Loughborough University

About

O. Makarovsky is an author at University of Nottingham specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	32	3K
2	Applied Physics	19	32	3K
3	Natural Sciences	7	7	127
4	Medicine	1	1	18
5	Chemical Engineering	1	1	35

O. Makarovsky

Publications

5.2K

Citations

H-Index

Page 1

	Year	Citations
Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics Thanasis Georgiou, R. Jalil, Branson D. Belle, Nature Nanotechnology Materials ScienceElectrical EngineeringGraphene Quantum DotEngineeringFlexible Electronics	2012	1.7K
Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement Garry W. Mudd, Simon A. Svatek, Tianhang Ren, Advanced Materials	2013	612
Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures Artem Mishchenko, J. S. Tu, Yun Cao, Nature Nanotechnology Twist-controlled Resonant TunnellingGraphene NanomeshesEngineeringPhysicsApplied Physics	2014	503
High Broad‐Band Photoresponsivity of Mechanically Formed InSe–Graphene van der Waals Heterostructures Garry W. Mudd, Simon A. Svatek, Lee Hague, Advanced Materials	2015	367
The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals Garry W. Mudd, Maciej R. Molas, X. Chen, Scientific Reports	2016	198
Universal mobility characteristics of graphene originating from charge scattering by ionised impurities Jonathan H. Gosling, O. Makarovsky, Feiran Wang, Communications Physics	2021	166
Quantum confinement and photoresponsivity of <i>β</i> -In <sub>2</sub> Se <sub>3</sub> nanosheets grown by physical vapour transport Nilanthy Balakrishnan, Christopher R. Staddon, Emily F. Smith, 2D Materials	2016	109
Phonon-Assisted Resonant Tunneling of Electrons in Graphene–Boron Nitride Transistors Artem Mishchenko, M. T. Greenaway, Mengjian Zhu, Physical Review Letters	2016	98
Engineering <i>p</i> – <i>n</i> junctions and bandgap tuning of InSe nanolayers by controlled oxidation Nilanthy Balakrishnan, Z. R. Kudrynskyi, Emily F. Smith, 2D Materials	2017	95
Linear magnetoresistance due to multiple-electron scattering by low-mobility islands in an inhomogeneous conductor N. Kozlova, Nobuya Mori, O. Makarovsky, Nature Communications	2012	93

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