E. Don�

Recombination via point defects and their complexes in solar silicon

А. R. Peaker, B. Hamilton, Gábor Paráda et al. · physica status solidi (a) · 2012 · 49 citations · Full text

Semiconductors, Semiconductor Technology, Electronic Devices +14

The structure of CuInSe2 films formed by co-evaporation of the elements

E. Don�, R. Hill, G.J. Russell · Solar Cells · 1986 · 33 citations

Materials Engineering, Materials Science, Transition Metal Chalcogenides +10

Suppression of thermal conductivity without impeding electron mobility in n-type XNiSn half-Heusler thermoelectrics

Sonia A. Barczak, Robert J. Quinn, John Halpin et al. · Journal of Materials Chemistry A · 2019 · 29 citations · Full text

Materials Science, Materials Engineering, Engineering +13

Modelling of Polarization Charge-Induced Asymmetry of I-V Characteristics of AlN/GaN-Based Resonant Tunnelling Structures

K. M. Indlekofer, E. Don�, J. Malindretos et al. · physica status solidi (b) · 2002 · 18 citations

Polarization Charge-induced Asymmetry, Wide-bandgap Semiconductor, Engineering +16