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Comment on “AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. <b>81</b>, 1729 (2002)]

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2003

Year

A. E. Belyaev, C. T. Foxon, O. Makarovsky, L. Eaves, Menno J. Kappers, C. J. Humphreys
Applied Physics Letters

Abstract

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References

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