IEEE Circuits and Devices Magazine · 1993 · 10 citations · 6 references
EngineeringElectrical EngineeringCircuit TheoryMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ModelingDiode CircuitsMetal-oxide-semiconductor Field-effect TransistorsP-n JunctionsThermal Properties Of SemiconductorsDiode Circuit AnalysisDiode ModelingJunction ModelingJunction ResistanceP-n Junction Characteristics
A new expression for the p-n junction that uses experimentally derived parameters that are more easily measured than those derived from theory is presented. This approach is useful when designing circuits that use diodes and transistors as diodes, such as thermometers, logarithmic amplifiers, and voltage-reference sources.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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