Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2012 · 11 citations · 0 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials ChemistryPolymer ChemistryPolymer CharacterizationPolymer SynthesisPolymer Thin FilmsExtreme Ultraviolet LithographyLine Edge Roughness AnalysisLine RoughnessLine-edge RoughnessResist Sensitivity
A novel series of stable, acid amplifiers (AAs) has been designed and tested for use in Extreme Ultraviolet (EUV) lithography, that generate strong, fluorinated polymer bound sulfonic acids. Novel polymer bound and blended AAs were prepared in moderate to good yields and characterized by NMR. We demonstrated by EUV lithography that the polymer bound AA resist has line-edge roughness (LER) values of 3.8 nm and the polymer blended AA resist has LER values of 2.1 nm while the control resist has LER values of 4.6 nm. Although sensitivity comparisons have yet to be made, these new resists using bound and blended AAs are showing remarkable improvements in LER when compared with the control resist without AAs.