Concepedia

Insight into the genesis of irregularity during crystal growth achieved monochromatic high sensitivity monochromatic synchrotron x-radiation diffraction imaging (topography)

Bruce Steiner, M. Kuriyama, R.C. Dobbyn

Progress in Crystal Growth and Characterization of Materials · 1990 · 41 citations · 100 references

DOI

Concepts

References

100

A Thermoelastic Analysis of Dislocation Generation in Pulled GaAs Crystals

A. S. Jordan, R. Caruso, A. R. Von Neida · Bell System Technical Journal · 1980 · 345 citations

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Defects in semiconductors

J. S. Blakemore · Materials Research Bulletin · 1981 · 310 citations

, , +15

Use of synchrotron radiation in X-ray diffraction topography

K. Naukkarinen, P. Rabe · physica status solidi (a) · 1974 · 239 citations

, , +16

Impurity effect on grown-in dislocation density of InP and GaAs crystals

Yasuo Seki, H. Watanabe, Junji Matsui · Journal of Applied Physics · 1978 · 232 citations

, , +17

Arsenic precipitation at dislocations in GaAs substrate material

A.G. Cullis, P. D. Augustus, D. J. Stirland · Journal of Applied Physics · 1980 · 140 citations

, , +15